WANG, Leqi. Research on the Thickness of Silicon Carbide Epitaxial Layer Based on the Geometrical Optics Propagation Model. Transactions on Engineering and Technology Research, [S. l.], v. 6, p. 50–61, 2026. DOI: 10.62051/m3kc2024. Disponível em: https://tetrdata.com/index.php/ojs/article/view/11. Acesso em: 17 jun. 2026.